| PART |
Description |
Maker |
| T2G6001528-Q3 |
18W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CGH35015F |
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| MRF16030 |
The RF Line NPN Silicon Power Transistor 30W, 1.6GHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| D2084UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(镀金多用DMOS射频硅场效应100W-28V-900MHz)) 金镀金属多功能硅的DMOS射频场效应管（功100W - 28V 900MHz时）（镀金多用的DMOS射频硅场效应管（功率100W - 28V 900MHz的）
TetraFET 100W - 28V - 900MHz
|
Sanyo Electric Co., Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| PHI617-30 PH1617-30 |
Wireless Bipolar Power Transistor/ 30W 1.6 - 1.7 GHz
Wireless Bipolar Power Transistor, 30W 1.6-1.7 GHz
CONNECTOR ACCESSORY 连接器附
|
Tyco Electronics
Electronic Theatre Controls, Inc.
PCA Electronics, Inc.
|
| TGA2612-SM-15 |
6 to 12 GHz GaN LNA
|
TriQuint Semiconductor
|
| TGA2611 |
2-6 GHz GaN LNA
|
TriQuint Semiconductor
|
| MGFS45V2735 MGFS45V273511 |
2.7-3.5 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
| R417306130 |
N ATTENUATOR 6 DB 4 GHZ 30W
|
List of Unclassifed Man...
|
| CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
| CGHV40100P-AMP |
100 W, DC - 4.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
